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1N5615 thru 1N5623 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This "fast recovery" rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com
APPEARANCE
WWW .Microsemi .C OM
"A" Package
FEATURES
* * * * * * Popular JEDEC registered 1N5615 to 1N5623 series Voidless hermetically sealed glass package Triple-Layer Passivation Internal "Category I" Metallurgical bonds Working Peak Reverse Voltage 200 to 1000 Volts. JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/429 * Surface mount equivalents also available in a square end-cap MELF configuration with "US" suffix (see separate data sheet for 1N5615US thru 1N5623US) * * * * * * * *
APPLICATIONS / BENEFITS
Fast recovery 1 Amp rectifiers 200 to 1000 V Military and other high-reliability applications General rectifier applications including bridges, halfbridges, catch diodes, etc. High forward surge current capability Extremely robust construction Low thermal resistance Controlled avalanche with peak reverse power capability Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
* * * * * * Junction & Storage Temperature: -65 C to +175 C Thermal Resistance: 38oC/W junction to lead at 3/8 inch (10 mm) lead length from body o Thermal Impedance: 4.5 C/W @ 10 ms heating time Average Rectified Forward Current (IO): 1.0 Amps @ TA = 55C Forward Surge Current: 30 Amps @ 8.3 ms half-sine Solder Temperatures: 260C for 10 s (maximum)
o o
MECHANICAL AND PACKAGING
* * CASE: Hermetically sealed voidless hard glass with Tungsten slugs (package dimensions on last page) TERMINATIONS: Axial leads are copper with Tin/Lead (Sn/Pb) finish. Note: Previous inventory had solid Silver axial-leads and no finish. MARKING: Body paint and part number, etc. POLARITY: Cathode band TAPE & REEL option: Standard per EIA-296 WEIGHT: 340 mg
REVERSE CURRENT (MAX.) IR @ VRWM
o
* * * *
ELECTRICAL CHARACTERISTICS
TYPE WORKING PEAK REVERSE VOLTAGE VRWM VOLTS 200 400 600 800 1000 MINIMUM BREAKDOWN VOLTAGE VBR @ 50A VOLTS 220 440 660 880 1100 AVERAGE RECTIFIED CURRENT IO @ T A (NOTE 1) AMPS o o 50 C 100 C 1.00 .750 1.00 .750 1.00 .750 1.00 .750 1.00 .750 FORWAR D VOLTAGE (MAX.) VF @ 3A VOLTS .8 MIN. CAPACITANCE (MAX.) C @ VR =12 V f=1 MHz pF 45 35 25 20 15 MAXIMUM SURGE CURRENT IFSM (NOTE 2) AMPS 25 25 25 25 25 REVERSE RECOVERY (MAX.) (NOTE 3) trr ns 150 150 250 300 500
1N5615 - 1N5623
1N5615 1N5617 1N5619 1N5621 1N5623
1.6 MAX.
25 C .5 .5 .5 .5 .5
A o 100 C 25 25 25 25 25
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC, derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal o resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 C. o NOTE 2: TA = 100 C, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals NOTE 3: IF = 0.5 A, IRM = 1 A, IR(REC) = 0.250 A
Copyright (c) 2007 1-15-2007 REV D
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N5615 thru 1N5623 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
WWW .Microsemi .C OM
Symbol
VBR VRWM IO VF IR C trr
SYMBOLS & DEFINITIONS Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
GRAPHS
FIGURE 1 MAXIMUM CURRENT vs LEAD TEMPERATURE
FIGURE 2 TYPICAL REVERSE CURRENT vs PIV
1N5615 - 1N5623
Copyright (c) 2007 1-15-2007 REV D
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N5615 thru 1N5623 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
WWW .Microsemi .C OM
FIGURE 3 MAXIMUM POWER vs LEAD TEMPERATURE
FIGURE 4 TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT
PACKAGE DIMENSIONS
1N5615 - 1N5623
Dimensions: Inches/[mm] NOTE: Lead tolerance = +0.003/-0.004 inches
Copyright (c) 2007 1-15-2007 REV D
Microsemi
Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3

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